AFT23H200-4S2LR6
NXP USA Inc.
NXP USA Inc.
FET RF 2CH 65V 2.3GHZ NI1230-4
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Reference Price (USD)
150+
$97.46987
Exquisite packaging
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The AFT23H200-4S2LR6 is a high-efficiency RF MOSFET transistor by NXP USA Inc., part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The AFT23H200-4S2LR6's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With NXP USA Inc.'s reputation for quality, you can trust the AFT23H200-4S2LR6 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 2.3GHz
- Gain: 15.3dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 500 mA
- Power - Output: 45W
- Voltage - Rated: 65 V
- Package / Case: NI-1230-4LS2L
- Supplier Device Package: NI-1230-4LS2L
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