MRF6V10250HSR3
NXP USA Inc.
NXP USA Inc.
FET RF 100V 1.09GHZ NI780S
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Discover the MRF6V10250HSR3, a cutting-edge RF MOSFET transistor from NXP USA Inc., engineered for the Discrete Semiconductor Products market. This product falls under the Transistors - FETs, MOSFETs - RF classification and boasts superior high-frequency characteristics, including minimal signal loss and outstanding power handling capabilities. Its advanced design ensures optimal performance in critical RF applications. The MRF6V10250HSR3 is particularly suited for use in satellite communication systems, broadcast transmitters, and medical imaging equipment. With features like enhanced linearity and robust ESD protection, this MOSFET is a top choice for engineers designing next-generation RF circuits. NXP USA Inc.'s commitment to quality ensures that the MRF6V10250HSR3 meets the highest industry standards for performance and durability.
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.09GHz
- Gain: 21dB
- Voltage - Test: 50 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 250 mA
- Power - Output: 250W
- Voltage - Rated: 100 V
- Package / Case: NI-780S
- Supplier Device Package: NI-780S
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