AIHD06N60RFATMA1
Infineon Technologies
Infineon Technologies
IC DISCRETE 600V TO252-3
$0.00
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Reference Price (USD)
2,500+
$0.77636
Exquisite packaging
Discount
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The AIHD06N60RFATMA1 Single IGBT transistor by Infineon Technologies is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the AIHD06N60RFATMA1 provides consistent performance in varied conditions. Rely on Infineon Technologies's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
- Power - Max: 100 W
- Switching Energy: 90µJ (on), 90µJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: 8ns/105ns
- Test Condition: 400V, 6A, 23Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3-313
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