AIMW120R080M1XKSA1
Infineon Technologies
Infineon Technologies
1200V COOLSIC MOSFET PG-TO247-3
$17.81
Available to order
Reference Price (USD)
1+
$17.81000
500+
$17.6319
1000+
$17.4538
1500+
$17.2757
2000+
$17.0976
2500+
$16.9195
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Discover the AIMW120R080M1XKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the AIMW120R080M1XKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 104mOhm @ 13A, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 5.6mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
- Vgs (Max): +20V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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