AOU3N60_001
Alpha & Omega Semiconductor Inc.
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 2.5A TO251-3
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Enhance your electronic projects with the AOU3N60_001 single MOSFET from Alpha & Omega Semiconductor Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Alpha & Omega Semiconductor Inc.'s AOU3N60_001 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 56.8W (Tc)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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