APT25GR120BSCD10
Microsemi Corporation
Microsemi Corporation
IGBT 1200V 75A 521W TO247
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Enhance your electronic projects with the APT25GR120BSCD10 Single IGBT transistor from Microsemi Corporation. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the APT25GR120BSCD10 ensures precision and reliability. Microsemi Corporation's cutting-edge technology guarantees a component that meets the highest industry standards. Choose APT25GR120BSCD10 for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
- Power - Max: 521 W
- Switching Energy: 434µJ (on), 466µJ (off)
- Input Type: Standard
- Gate Charge: 203 nC
- Td (on/off) @ 25°C: 16ns/122ns
- Test Condition: 600V, 25A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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