APT30GP60B2DLG
Microsemi Corporation
Microsemi Corporation
IGBT 600V 100A 463W TMAX
$0.00
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Reference Price (USD)
56+
$9.88000
Exquisite packaging
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Experience top-tier performance with the APT30GP60B2DLG Single IGBT transistor from Microsemi Corporation. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the APT30GP60B2DLG ensures energy efficiency and reliability. Trust Microsemi Corporation's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
- Power - Max: 463 W
- Switching Energy: 260µJ (on), 250µJ (off)
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 13ns/55ns
- Test Condition: 400V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: T-MAX™
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