APT30N60KC6
Microsemi Corporation
Microsemi Corporation
MOSFET N-CH 600V 30A TO220
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the APT30N60KC6 single MOSFET from Microsemi Corporation. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the APT30N60KC6 combines cutting-edge technology with Microsemi Corporation's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 2267 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 219W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 [K]
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IRL3102STRLPBF
Nexperia USA Inc.
2N7002BKM,315
Infineon Technologies
IPI072N10N3GXK
Vishay Siliconix
IRF640STRR
Infineon Technologies
IRL3502STRRPBF
Infineon Technologies
IRFL4310TR
IXYS
IXFQ21N50Q
Harris Corporation
IRF232
Infineon Technologies
IPB60R380P6ATMA1
Micro Commercial Co