APT45GR65B2DU30
Microsemi Corporation
Microsemi Corporation
INSULATED GATE BIPOLAR TRANSISTO
$0.00
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Reference Price (USD)
90+
$7.24533
Exquisite packaging
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Enhance your electronic projects with the APT45GR65B2DU30 Single IGBT transistor from Microsemi Corporation. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the APT45GR65B2DU30 ensures precision and reliability. Microsemi Corporation's cutting-edge technology guarantees a component that meets the highest industry standards. Choose APT45GR65B2DU30 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 118 A
- Current - Collector Pulsed (Icm): 224 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
- Power - Max: 543 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 203 nC
- Td (on/off) @ 25°C: 15ns/100ns
- Test Condition: 433V, 45A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: T-MAX™ [B2]
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