APT70GR65B2SCD30
Microsemi Corporation
Microsemi Corporation
INSULATED GATE BIPOLAR TRANSISTO
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The APT70GR65B2SCD30 Single IGBT transistor by Microsemi Corporation is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the APT70GR65B2SCD30 provides consistent performance in varied conditions. Rely on Microsemi Corporation's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 134 A
- Current - Collector Pulsed (Icm): 260 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A
- Power - Max: 595 W
- Switching Energy: -
- Input Type: -
- Gate Charge: 305 nC
- Td (on/off) @ 25°C: 19ns/170ns
- Test Condition: 433V, 70A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: T-MAX™ [B2]
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