APT45GR65BSCD10
Microsemi Corporation
Microsemi Corporation
INSULATED GATE BIPOLAR TRANSISTO
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The APT45GR65BSCD10 Single IGBT transistor by Microsemi Corporation is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The APT45GR65BSCD10 ensures precise power control and long-term stability. With Microsemi Corporation's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate APT45GR65BSCD10 into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 118 A
- Current - Collector Pulsed (Icm): 224 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 45A
- Power - Max: 543 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 203 nC
- Td (on/off) @ 25°C: 15ns/100ns
- Test Condition: 433V, 45A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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