APT50GF120JRD
Microchip Technology
Microchip Technology
IGBT NPT COMBI 1200V 50A ISOTOP
$48.82
Available to order
Reference Price (USD)
1+
$48.82400
500+
$48.33576
1000+
$47.84752
1500+
$47.35928
2000+
$46.87104
2500+
$46.3828
Exquisite packaging
Discount
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Microchip Technology's APT50GF120JRD sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the APT50GF120JRD in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Microchip Technology to deliver cutting-edge IGBT solutions with the APT50GF120JRD power module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 460 W
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 50A
- Current - Collector Cutoff (Max): 750 µA
- Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227 (ISOTOP®)
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