FF600R12KE4PBOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V
$309.62
Available to order
Reference Price (USD)
1+
$309.62000
500+
$306.5238
1000+
$303.4276
1500+
$300.3314
2000+
$297.2352
2500+
$294.139
Exquisite packaging
Discount
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Engineered for excellence, the FF600R12KE4PBOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The FF600R12KE4PBOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the FF600R12KE4PBOSA1.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 600 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-62MM-1
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