APT50GS60BRDLG
Microsemi Corporation
Microsemi Corporation
IGBT 600V 93A 415W TO247
$0.00
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Reference Price (USD)
50+
$10.10480
Exquisite packaging
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The APT50GS60BRDLG Single IGBT transistor by Microsemi Corporation is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The APT50GS60BRDLG ensures precise power control and long-term stability. With Microsemi Corporation's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate APT50GS60BRDLG into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 93 A
- Current - Collector Pulsed (Icm): 195 A
- Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
- Power - Max: 415 W
- Switching Energy: 755µJ (off)
- Input Type: Standard
- Gate Charge: 235 nC
- Td (on/off) @ 25°C: 16ns/225ns
- Test Condition: 400V, 50A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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