APT50GT120B2RDLG
Microsemi Corporation
Microsemi Corporation
IGBT 1200V 106A 694W TO-247
$18.81
Available to order
Reference Price (USD)
1+
$19.91000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The APT50GT120B2RDLG from Microsemi Corporation is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose APT50GT120B2RDLG for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 106 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
- Power - Max: 694 W
- Switching Energy: 3585µJ (on), 1910µJ (off)
- Input Type: Standard
- Gate Charge: 240 nC
- Td (on/off) @ 25°C: 23ns/215ns
- Test Condition: 800V, 50A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: -
Related Products
Fairchild Semiconductor
HGT1S14N36G3VLT
IXYS
IXYH40N120C3D1
STMicroelectronics
STGW35NB60SD
IXYS
IXGL75N250
IXYS
IXYH40N120B3
Microchip Technology
APT95GR65B2
Rohm Semiconductor
RGTH40TK65GC11
onsemi
NGTB30N120L2WG
onsemi
FGA60N65SMD
onsemi