FGA60N65SMD
onsemi
onsemi
IGBT FIELD STOP 650V 120A TO3P
$6.53
Available to order
Reference Price (USD)
1+
$5.35000
10+
$4.82300
450+
$3.78593
900+
$3.41433
1,350+
$2.90581
Exquisite packaging
Discount
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The FGA60N65SMD Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The FGA60N65SMD ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate FGA60N65SMD into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
- Power - Max: 600 W
- Switching Energy: 1.54mJ (on), 450µJ (off)
- Input Type: Standard
- Gate Charge: 189 nC
- Td (on/off) @ 25°C: 18ns/104ns
- Test Condition: 400V, 60A, 3Ohm, 15V
- Reverse Recovery Time (trr): 47 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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