IXGM25N100A
IXYS
IXYS
POWER MOSFET TO-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXGM25N100A Single IGBT transistor by IXYS is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the IXGM25N100A provides consistent performance in varied conditions. Rely on IXYS's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
- Power - Max: 200 W
- Switching Energy: 5mJ (off)
- Input Type: Standard
- Gate Charge: 180 nC
- Td (on/off) @ 25°C: 100ns/500ns
- Test Condition: 800V, 25A, 33Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AE
- Supplier Device Package: TO-204AE
Related Products
Infineon Technologies
IRGC4066EFX7SA1
Harris Corporation
HGTP10N40E1
Littelfuse Inc.
LGB8207BTH
onsemi
FGAF30S65AQ
Microsemi Corporation
76018
Infineon Technologies
SIGC18T60NCX1SA4
Infineon Technologies
IGC70T120T8RQ
Infineon Technologies
IRGC14C40LD
Infineon Technologies
IGC99T120T8RQX1SA1
Infineon Technologies