APT75GN60B2DQ3G
Microsemi Corporation
Microsemi Corporation
IGBT 600V 155A 536W TO264
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Enhance your electronic projects with the APT75GN60B2DQ3G Single IGBT transistor from Microsemi Corporation. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the APT75GN60B2DQ3G ensures precision and reliability. Microsemi Corporation's cutting-edge technology guarantees a component that meets the highest industry standards. Choose APT75GN60B2DQ3G for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 155 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A
- Power - Max: 536 W
- Switching Energy: 2500µJ (on), 2140µJ (off)
- Input Type: Standard
- Gate Charge: 485 nC
- Td (on/off) @ 25°C: 47ns/385ns
- Test Condition: 400V, 75A, 1Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: -
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