APTC90H12T1G
Microsemi Corporation
Microsemi Corporation
MOSFET 4N-CH 900V 30A SP1
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The APTC90H12T1G by Microsemi Corporation is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the APTC90H12T1G provides reliable operation under stringent conditions. Microsemi Corporation's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Obsolete
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Super Junction
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 30A
- Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
- Power - Max: 250W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
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