VWM200-01P
IXYS
IXYS
MOSFET 6N-CH 100V 210A V2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the VWM200-01P, a premium Transistors - FETs, MOSFETs - Arrays product from IXYS. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the VWM200-01P delivers consistent and reliable operation. IXYS's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Obsolete
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 210A
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V2-PAK
- Supplier Device Package: V2-PAK
Related Products
IXYS
GMM3X60-015X2-SMD
Alpha & Omega Semiconductor Inc.
AON2880
Diodes Incorporated
DMN5L06VK-7-G
NXP USA Inc.
MRF6V2300NR5578
Microchip Technology
APTMC170AM60CT1AG
onsemi
FW344A-TL-2WX
Microsemi Corporation
APTM50DSKM65T3G
Renesas Electronics America Inc
UPA2382T1P-E1-A#YK1
onsemi
MCH3360-TL-E-ON
onsemi