APTCV60HM70BT3G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 600V 50A 250W SP3
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Experience next-generation power control with Microsemi Corporation's APTCV60HM70BT3G IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The APTCV60HM70BT3G offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the APTCV60HM70BT3G in your next-generation HVDC systems or particle accelerator power supplies. Microsemi Corporation delivers reliability where it matters most with the APTCV60HM70BT3G IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Boost Chopper, Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 250 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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