VS-GT50TP60N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 85A 208W INT-A-PAK
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Reference Price (USD)
24+
$167.50250
Exquisite packaging
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Experience next-generation power control with Vishay General Semiconductor - Diodes Division's VS-GT50TP60N IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The VS-GT50TP60N offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the VS-GT50TP60N in your next-generation HVDC systems or particle accelerator power supplies. Vishay General Semiconductor - Diodes Division delivers reliability where it matters most with the VS-GT50TP60N IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 85 A
- Power - Max: 208 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 3.03 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3 + 4)
- Supplier Device Package: INT-A-PAK
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