APTGF150DH120G
Microchip Technology
Microchip Technology
IGBT MODULE 1200V 200A 961W SP6
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Experience next-generation power control with Microchip Technology's APTGF150DH120G IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The APTGF150DH120G offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the APTGF150DH120G in your next-generation HVDC systems or particle accelerator power supplies. Microchip Technology delivers reliability where it matters most with the APTGF150DH120G IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Asymmetrical Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 961 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
- Current - Collector Cutoff (Max): 350 µA
- Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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