IRG5U75HF12A
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 130A POWIR 34
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Discover the power of Infineon Technologies's IRG5U75HF12A, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The IRG5U75HF12A performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Infineon Technologies's IRG5U75HF12A, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 130 A
- Power - Max: 540 W
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 75A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 9.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: POWIR® 34 Module
- Supplier Device Package: POWIR® 34
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