APTGF15A120T1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 25A 140W SP1
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Microsemi Corporation's APTGF15A120T1G IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The APTGF15A120T1G offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the APTGF15A120T1G in your next-generation HVDC systems or particle accelerator power supplies. Microsemi Corporation delivers reliability where it matters most with the APTGF15A120T1G IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 25 A
- Power - Max: 140 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP1
- Supplier Device Package: SP1
Related Products
IXYS
IXGE200N60B
Microsemi Corporation
APTGF90TDU60PG
Infineon Technologies
MA15037577NDSA1
Infineon Technologies
IRG7T300CH12B
Infineon Technologies
FF150R12KE3B8BOSA1
Powerex Inc.
CM100TL-12NF
Powerex Inc.
CM50TL-24NF
Microsemi Corporation
APTGT100SK60T1G
Microsemi Corporation
APTGT450DU60G
Microsemi Corporation