APTGT450DU60G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 600V 550A 1750W SP6
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Microsemi Corporation's APTGT450DU60G stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the APTGT450DU60G enables higher power density in MRI gradient amplifiers. Choose Microsemi Corporation for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Dual, Common Source
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 550 A
- Power - Max: 1750 W
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 450A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6
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Microsemi Corporation