APTGF330A60D3G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 600V 520A 1560W D3
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Optimize your power systems with Microsemi Corporation's APTGF330A60D3G, a high-efficiency IGBT module in the Discrete Semiconductor Products range. This transistor module incorporates seventh-generation micro-pattern trench technology for minimal conduction losses. Special features include: integrated gate driver compatibility, SCADA-ready monitoring interfaces, and corrosion-resistant terminals. Application areas cover industrial cranes, subway power networks, and large-scale battery storage systems. The APTGF330A60D3G is particularly effective in high-ambient-temperature environments like steel mill drives. Microsemi Corporation brings decades of semiconductor expertise to every APTGF330A60D3G module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 520 A
- Power - Max: 1560 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 400A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D-3 Module
- Supplier Device Package: D3
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