APTGF660U60D4G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 600V 860A 2800W D4
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Microsemi Corporation's APTGF660U60D4G sets the benchmark for IGBT modules in the Transistors - IGBTs - Modules sector. This discrete semiconductor product features revolutionary reverse-conducting technology and dual-side cooling capability. The module's competitive advantages include: 50% higher power cycling capability, RoHS-compliant materials, and vibration-resistant construction. It's ideally suited for hybrid electric vehicles, smart grid applications, and high-power RF amplifiers. Implement the APTGF660U60D4G in your traction inverters or high-energy physics experiments for unparalleled performance. Trust Microsemi Corporation to deliver cutting-edge IGBT solutions with the APTGF660U60D4G power module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 860 A
- Power - Max: 2800 W
- Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 800A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D4
- Supplier Device Package: D4
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