VS-GB400AH120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 650A INT-A-PAK
$0.00
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Reference Price (USD)
12+
$532.61000
Exquisite packaging
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Experience next-generation power control with Vishay General Semiconductor - Diodes Division's VS-GB400AH120N IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The VS-GB400AH120N offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the VS-GB400AH120N in your next-generation HVDC systems or particle accelerator power supplies. Vishay General Semiconductor - Diodes Division delivers reliability where it matters most with the VS-GB400AH120N IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 650 A
- Power - Max: 2500 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 400A (Typ)
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 30 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (5)
- Supplier Device Package: Double INT-A-PAK
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