APTGT100TA60PG
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 600V 150A 340W SP6P
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Microsemi Corporation's APTGT100TA60PG IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The APTGT100TA60PG offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the APTGT100TA60PG in your next-generation HVDC systems or particle accelerator power supplies. Microsemi Corporation delivers reliability where it matters most with the APTGT100TA60PG IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Three Phase
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 340 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 6.1 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP6
- Supplier Device Package: SP6-P
Related Products
IXYS
VII130-06P1
Infineon Technologies
6PS04012E33G43439NOSA1
Infineon Technologies
6PS04012E4DG36022NOSA1
Powerex Inc.
CM100DU-24F
Infineon Technologies
DF400R07PE4R_B6
IXYS
MIO1200-33E10
Littelfuse Inc.
MG17450WB-BN4MM
IXYS
MWI15-12A6K
Infineon Technologies
IFS150V12PT4BOSA1
Microsemi Corporation