APTGT200DA170D3G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1700V 400A 1250W D3
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Discover the power of Microsemi Corporation's APTGT200DA170D3G, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The APTGT200DA170D3G performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Microsemi Corporation's APTGT200DA170D3G, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 400 A
- Power - Max: 1250 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 17 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: D-3 Module
- Supplier Device Package: D3
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