APTGT75A120D1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 110A 357W D1
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the APTGT75A120D1G IGBT module by Microsemi Corporation sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The APTGT75A120D1G finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Microsemi Corporation continues to lead the IGBT module revolution with innovations like the APTGT75A120D1G.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 110 A
- Power - Max: 357 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Current - Collector Cutoff (Max): 4 mA
- Input Capacitance (Cies) @ Vce: 5.345 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
Related Products
Infineon Technologies
FS75R07N2E4BOSA1
Infineon Technologies
IRG7U100HF12B
Microsemi Corporation
APTGT100DA120D1G
IXYS
MIAA20WB600TMH
Vishay General Semiconductor - Diodes Division
VS-GA200HS60S1
Powerex Inc.
CM150TU-12H
Powerex Inc.
CM100DU-12H
IXYS
MUBW35-12E7
Microsemi Corporation
APTGF250A60D3G
IXYS