APTGT50H60T2G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 600V 80A 176W SP2
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Microsemi Corporation's APTGT50H60T2G stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the APTGT50H60T2G enables higher power density in MRI gradient amplifiers. Choose Microsemi Corporation for IGBT modules that push performance boundaries.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Power - Max: 176 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP2
- Supplier Device Package: SP2
Related Products
IXYS
VDI75-06P1
Microsemi Corporation
APTGF100DU120TG
Infineon Technologies
DF200R12W1H3FB11BPSA1
Infineon Technologies
FD-DF80R12W1H3_B52
Powerex Inc.
CM100RX-12A
IXYS
MWI75-12A8T
Powerex Inc.
CM75BU-12H
IXYS
VWI6-12P1
Microsemi Corporation
APTGF75DDA120TG
Infineon Technologies