APTGT50A120D1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 75A 270W D1
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The APTGT50A120D1G from Microsemi Corporation exemplifies excellence in Transistors - IGBTs - Modules technology. This discrete semiconductor solution features a unique direct liquid cooling design for maximum power density. Technical highlights include: 200% overload capability, ultra-thin wafer technology, and short-circuit protection. The module excels in demanding applications such as electric aircraft propulsion, mining equipment, and high-speed rail systems. A typical deployment would be using the APTGT50A120D1G in megawatt-level wind turbine converters. With Microsemi Corporation's proven track record, the APTGT50A120D1G represents the future of power semiconductor modules.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 75 A
- Power - Max: 270 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
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