APTGT200SK120D3G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 300A 1050W D3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Microsemi Corporation's APTGT200SK120D3G IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The APTGT200SK120D3G offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the APTGT200SK120D3G in your next-generation HVDC systems or particle accelerator power supplies. Microsemi Corporation delivers reliability where it matters most with the APTGT200SK120D3G IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 1050 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
- Current - Collector Cutoff (Max): 6 mA
- Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: D-3 Module
- Supplier Device Package: D3
Related Products
Powerex Inc.
CM200TU-12F
Powerex Inc.
CM100DY-34A
Microsemi Corporation
APTGF660U60D4G
Powerex Inc.
CM1000DXL-24S
Infineon Technologies
FT150R12KE3G_B4
Infineon Technologies
900546CHOSA1
Microsemi Corporation
APTGV25H120T3G
Littelfuse Inc.
MG17300D-BN4MM
IXYS
MITB15WB1200TMH
Vishay General Semiconductor - Diodes Division