BSM50GP60B2BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's BSM50GP60B2BOSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the BSM50GP60B2BOSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Infineon Technologies
IRG5U75HH12E
Infineon Technologies
IRG5U100HF12B
Microsemi Corporation
APTGF360U60D4G
Infineon Technologies
2PS24017E3CE32778NWSA1
Powerex Inc.
CM600DXL-24S
Infineon Technologies
FZ1200R33KF2CB3S2NDSA1
Powerex Inc.
CM100DY-34T
Powerex Inc.
MG600J2YS61A
Microsemi Corporation
APTGT35H120T1G
IXYS