APTGT75H60T2G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 600V 100A 250W SP2
$0.00
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Reference Price (USD)
100+
$46.60230
Exquisite packaging
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The APTGT75H60T2G by Microsemi Corporation redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the APTGT75H60T2G in high-efficiency servo controllers for manufacturing automation. Microsemi Corporation combines innovation with quality in every APTGT75H60T2G module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 250 W
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 4.62 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP2
- Supplier Device Package: SP2
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