APTGT75SK170D1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1700V 120A 520W D1
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Microsemi Corporation's APTGT75SK170D1G represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the APTGT75SK170D1G in industrial servo drives or medium-voltage frequency converters. Trust Microsemi Corporation's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 120 A
- Power - Max: 520 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
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