APTGV25H120BG
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 40A 156W SP4
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The APTGV25H120BG by Microsemi Corporation redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the APTGV25H120BG in high-efficiency servo controllers for manufacturing automation. Microsemi Corporation combines innovation with quality in every APTGV25H120BG module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT, Trench Field Stop
- Configuration: Boost Chopper, Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Power - Max: 156 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 1.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP4
- Supplier Device Package: SP4
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