APTM100UM65DAG
Microchip Technology
Microchip Technology
MOSFET N-CH 1000V 145A SP6
$331.52
Available to order
Reference Price (USD)
100+
$183.58470
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the APTM100UM65DAG single MOSFET from Microchip Technology. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the APTM100UM65DAG combines cutting-edge technology with Microchip Technology's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 1068 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 28500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3250W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SP6
- Package / Case: SP6
Related Products
Toshiba Semiconductor and Storage
SSM6K204FE,LF
Taiwan Semiconductor Corporation
TSM035NB04CZ
NXP Semiconductors
BUK9540-100A,127
Diodes Incorporated
DMT10H010LPS-13
Diodes Incorporated
DMTH6010LPSW-13
UnitedSiC
UJ4C075033K3S
Renesas Electronics America Inc
2SK3404-Z-E1-AZ
onsemi
FDPF18N50T-G
Goford Semiconductor
G30N03D3
Renesas Electronics America Inc