APTM100VDA35T3G
Microsemi Corporation
Microsemi Corporation
MOSFET 2N-CH 1000V 22A SP3
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Upgrade your electronic designs with the APTM100VDA35T3G by Microsemi Corporation, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the APTM100VDA35T3G ensures energy efficiency and robust performance. Microsemi Corporation's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @ 25°C: 22A
- Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
- Power - Max: 390W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SP3
- Supplier Device Package: SP3
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