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APTML10UM09R004T1AG

Microsemi Corporation
APTML10UM09R004T1AG Preview
Microsemi Corporation
MOSFET N-CH 100V 154A SP1
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 9875 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1

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