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NTMFS005P03P8ZT1G

onsemi
NTMFS005P03P8ZT1G Preview
onsemi
MOSFET P-CH
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 164A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.7mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 4.5 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 7880 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 900mW (Ta), 104W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads

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