BA12004BF-E2
Rohm Semiconductor
Rohm Semiconductor
TRANS 7NPN DARL 60V 0.5A 16SOP
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The BA12004BF-E2 from Rohm Semiconductor is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision amplification and switching applications. This Discrete Semiconductor Product integrates multiple transistors in a single package, offering enhanced thermal stability and space-saving benefits. Ideal for analog circuits, motor control, and signal processing, the BA12004BF-E2 ensures reliable performance in industrial automation, automotive electronics, and consumer devices. Its compact design and low power consumption make it a preferred choice for engineers seeking efficiency and durability.
Specifications
- Product Status: Obsolete
- Transistor Type: 7 NPN Darlington
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
- Power - Max: 620mW
- Frequency - Transition: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.173", 4.40mm Width)
- Supplier Device Package: 16-SOP
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