BAS4007WH6327
Infineon Technologies
Infineon Technologies
SCHOTTKY DIODE
$0.11
Available to order
Reference Price (USD)
1+
$0.11000
500+
$0.1089
1000+
$0.1078
1500+
$0.1067
2000+
$0.1056
2500+
$0.1045
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, Infineon Technologies's BAS4007WH6327 represents the next generation of rectifier diode arrays. This Discrete Semiconductor Product features innovative passivation layers that enhance reliability in humid conditions. Its primary applications include marine electronics, oil drilling equipment, and military power systems where corrosion resistance is paramount. With Infineon Technologies's proprietary screening processes, the BAS4007WH6327 guarantees exceptional performance in the most challenging electrical environments.
Specifications
- Product Status: Active
- Diode Configuration: 2 Independent
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io) (per Diode): 120mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 30 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
Related Products
Taiwan Semiconductor Corporation
HER1608PT
Panjit International Inc.
UF1003CT_T0_00001
Central Semiconductor Corp
CMXD2004 TR PBFREE
Vishay General Semiconductor - Diodes Division
VS-30CTH02-1-M3
Vishay General Semiconductor - Diodes Division
VT2060C-M3/4W
Vishay General Semiconductor - Diodes Division
SS8P2CLHM3_A/H
Vishay General Semiconductor - Diodes Division
VS-U5FH150FA60
Rohm Semiconductor
RB088NS100TL
IXYS
MDD95-22N1B
Vishay General Semiconductor - Diodes Division