BAV70E6767
Infineon Technologies
Infineon Technologies
GENERAL PURPOSE HIGH SPEED SWITC
$0.02
Available to order
Reference Price (USD)
1+
$0.02000
500+
$0.0198
1000+
$0.0196
1500+
$0.0194
2000+
$0.0192
2500+
$0.019
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For engineers specializing in power electronics, the BAV70E6767 by Infineon Technologies represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With Infineon Technologies's patented junction design, the BAV70E6767 achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 150 nA @ 70 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: -
Related Products
Vishay General Semiconductor - Diodes Division
VI20120C-E3/4W
Panjit International Inc.
BD645CS_L2_00001
GeneSiC Semiconductor
MURTA40020R
Toshiba Semiconductor and Storage
TBAT54S,LM
Taiwan Semiconductor Corporation
TSD10H100CW
Vishay General Semiconductor - Diodes Division
MBRB30H60CTHE3_B/I
STMicroelectronics
STPS16045TV
Rohm Semiconductor
BAT54SHMT116
Panjit International Inc.
ER1601FCT_T0_00001
Panjit International Inc.