BC847BQB-QZ
Nexperia USA Inc.
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
$0.04
Available to order
Reference Price (USD)
1+
$0.03922
500+
$0.0388278
1000+
$0.0384356
1500+
$0.0380434
2000+
$0.0376512
2500+
$0.037259
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the BC847BQB-QZ Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BC847BQB-QZ delivers superior performance in diverse environments. Nexperia USA Inc.'s commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 340 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 3-XDFN Exposed Pad
- Supplier Device Package: DFN1110D-3
Related Products
Central Semiconductor Corp
MJE520 PBFREE
Central Semiconductor Corp
BC546A PBFREE
Microchip Technology
2C4399
Microchip Technology
2N5241
NXP USA Inc.
BLF574XRS112
Microchip Technology
2N5666U3
Microchip Technology
JAN2N3635
onsemi
2SC5226-5-TL-E
Microchip Technology
JANSD2N2907AUBC
Microchip Technology