GE6062
Harris Corporation
Harris Corporation
TRANS NPN DARL 450V 20A TO3
$4.11
Available to order
Reference Price (USD)
1+
$4.11000
500+
$4.0689
1000+
$4.0278
1500+
$3.9867
2000+
$3.9456
2500+
$3.9045
Exquisite packaging
Discount
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Experience unmatched performance with the GE6062 Bipolar Junction Transistor (BJT) by Harris Corporation. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the GE6062 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Harris Corporation for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 20 A
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 20A
- Current - Collector Cutoff (Max): 250µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10A, 5V
- Power - Max: 125 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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