BCR 162F E6327
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 250MW TSFP-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with Infineon Technologies's BCR 162F E6327, a pre-biased BJT transistor engineered for efficiency. This single bipolar transistor features optimized current gain and minimal leakage, perfect for low-power circuits. Its compact package suits space-constrained applications like IoT devices, automotive modules, and power management systems. Infineon Technologies delivers superior discrete semiconductor solutions meeting rigorous industry standards for durability and performance.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: PG-TSFP-3
Related Products
Infineon Technologies
BCR166WE6327HTSA1
Infineon Technologies
BCR 119T E6327
Panasonic Electronic Components
DRC3114E0L
Panasonic Electronic Components
UNR5116G0L
Panasonic Electronic Components
UNR212400L
Rohm Semiconductor
DTC143XUBHZGTL
Rohm Semiconductor
DTC143ZEBHZGTL
Micro Commercial Co
DTA123JKA-TP
NXP USA Inc.
PDTB123EK,115
Infineon Technologies