BCR133WE6327
Infineon Technologies
Infineon Technologies
BIPOLAR DIGITAL TRANSISTOR
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BCR133WE6327 from Infineon Technologies is a high-performance Bipolar Junction Transistor (BJT) designed for precision applications. This pre-biased transistor simplifies circuit design by integrating resistors, reducing component count and board space. Ideal for switching and amplification, it offers excellent thermal stability and low saturation voltage. Common applications include LED drivers, relay switches, and audio amplifiers. Trust Infineon Technologies's expertise in discrete semiconductors for reliable performance in industrial and consumer electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- Frequency - Transition: -
- Power - Max: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Panasonic Electronic Components
UNR411F00A
Panasonic Electronic Components
DRA2123J0L
Infineon Technologies
BCR 162L3 E6327
Fairchild Semiconductor
FJX4004RTF
Panasonic Electronic Components
DRA9123Y0L
Panasonic Electronic Components
DRA3123Y0L
Rohm Semiconductor
DTC123JSATP
Panasonic Electronic Components
UNR211400L
Panasonic Electronic Components
UNR92A8G0L
NXP USA Inc.